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| SKM 200GB12T4 Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITRANS(R) 3 IGBT4 Modules SKM 200GB12T4 Module Target Data Inverse Diode Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications Remarks GB 1 13-09-2007 SCH (c) by SEMIKRON SKM 200GB12T4 Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITRANS(R) 3 IGBT4 Modules Freewheeling Diode SKM 200GB12T4 Target Data Features Module Typical Applications This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. Remarks This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. GB 2 13-09-2007 SCH (c) by SEMIKRON SKM 200GB12T4 Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 3 13-09-2007 SCH (c) by SEMIKRON SKM 200GB12T4 Fig. 9 Transient thermal impedance of IGBT and Diode Fig. 10 CAL diode forward characteristic 4 13-09-2007 SCH (c) by SEMIKRON SKM 200GB12T4 UL recognized file no. E 63 532 5 13-09-2007 SCH (c) by SEMIKRON |
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